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PD - - TBD PD 94641
IRF7494
HEXFET(R) Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
150V
RDS(on) max
44m:@VGS = 10V
ID
5.2A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 100C IDM PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
150 20 5.2 3.7 42 3.0 0.02 3.0 -55 to + 175 150
Units
V
c
A W W/C V/ns C
Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
h
Storage Temperature Range
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount)
Typ.
Max.
20 50
Units
C/W
e
--- ---
Notes through are on page 8
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01/28/03 03/11/03
IRF7494
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
150 --- --- 2.5 --- --- --- --- --- 0.15 35 --- --- --- --- --- --- --- 44 4.5 1.0 250 100 -100 nA V m V A
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 3.1A
V/C Reference to 25C, ID = 1mA
f
VDS = VGS, ID = 250A VDS = 120V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
12 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 36 7.5 13 15 13 36 14 1750 220 100 870 120 170 --- 54 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = 3.1A VDS = 75V VGS = 10V ID = 3.1A RG = 6.5 VGS = 10V VGS = 0V VDS = 25V
Conditions
VDS = 50V, ID = 5.2A
f f
VDD = 100V 75V
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 120V, = 1.0MHz VGS = 0V, VDS = 0V to 120V
g
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- --- Max. 370 3.1 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 55 140 2.7 A 42 1.3 --- --- V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 3.1A, VGS = 0V TJ = 25C, IF = 3.1A, VDD = 25V di/dt = 100A/s
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7494
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
4.5V
1
4.5V
0.1
1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100 1000 0.1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100 1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance
ID = 5.2A
2.5
ID, Drain-to-Source Current ()
TJ = 175C
10
VGS = 10V
2.0
(Normalized)
1.5
T J = 25C
1
1.0
VDS = 50V 20s PULSE WIDTH
0.1 4 5 6 7
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF7494
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
12.0 ID= 3.1A
VGS , Gate-to-Source Voltage (V)
10.0
10000
VDS= 120V VDS= 75V VDS= 30V
C, Capacitance(pF)
8.0
Ciss
1000
6.0
Coss Crss
100
4.0
2.0
10 1 10 100 1000
0.0 0 5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
10.00
TJ = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100sec
1.00
T J = 25C
1 T A = 25C Tj = 175C Single Pulse 0.1 1 10 1msec 10msec 100 1000
VGS = 0V 0.10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7494
6
VDS RD
5
ID, Drain Current (A)
RG
VGS
D.U.T.
+
4
-V DD
3
10V
Pulse Width 1 s Duty Factor 0.1 %
2
Fig 10a. Switching Time Test Circuit
1
VDS 90%
0 25 50 75 100 125 150 175 T A , Ambient Temperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01
PDM t1
0.1
SINGLE PULSE ( THERMAL RESPONSE )
t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7494
RDS (on) , Drain-to-Source On Resistance (m )
50
RDS(on) , Drain-to -Source On Resistance (m )
800 700 600 500 400 300 200 100 0 4 6 8 10 12 14 16 18
45 VGS = 10V 40
ID = 5.2A
35
30 0 5 10 15 20 25 30 35 40 45 ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
1000
Charge
VGS
3mA
IG
ID
EAS , Single Pulse Avalanche Energy (mJ)
Current Sampling Resistors
800
ID TOP 1.3A 2.6A BOTTOM 3.1A
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
600
400
15V
V(BR)DSS tp
VDS L
200
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0
A
25
50
75
100
125
150
175
I AS
tp
0.01
Starting T J , Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy vs. Drain Current
6
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IRF7494
SO-8 Package Details
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IRF7494
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 77mH RG = 25, IAS = 3.1A. When mounted on 1 inch square copper board, t 10 sec.
Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
ISD 3.1A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/03
8
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